People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Nedeljković, Miloš
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2021Suspended germanium waveguides with metamaterial lateral cladding for mid-infrared integrated photonicscitations
- 2021Suspended germanium waveguides with metamaterial lateral cladding for mid-infrared integrated photonicscitations
- 2021Suspended germanium waveguides with subwavelength-grating metamaterial cladding for the mid-infrared bandcitations
- 2021Suspended germanium waveguides with subwavelength-grating metamaterial cladding for the mid-infrared bandcitations
- 2018Chalcogenide glass waveguides with paper-based fluidics for mid-infrared absorption spectroscopycitations
- 2016Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial claddingcitations
- 2016Fourier-transform on-chip microspectrometers
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Long-wavelength silicon photonic integrated circuits
- 2014Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulatorcitations
Places of action
Organizations | Location | People |
---|
article
Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulator
Abstract
In this paper we focus on developing an efficient method to obtain a crystalline SiGe layer on top of an insulator. The method is aimed at enabling the fabrication of different concentration of crystalline SiGe alloy through structure engineering. This technique could enable the alloy composition to be different by design across a single wafer by using a single Germanium deposition step.