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Guedj, Cyril
CEA LETI
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser depositioncitations
- 2019Atomistic modelling of diamond-type Si x Ge y C z Sn1− x − y − z crystals for realistic transmission electron microscopy image simulations
- 2019Atomistic modelling of diamond-type Si<i>x</i>Ge<i>y</i>C<i>z</i>Sn1−<i>x</i>−<i>y</i>−<i>z</i> crystals for realistic transmission electron microscopy image simulations
- 2018Impact of Hydrogen on Graphene-based Materials: Atomistic Modeling and Simulation of HRSTEM Images
- 2016Measurement of energy‐loss anisotropy along [001] in monoclinic hafnia and comparison with ab‐initio simulations
- 2014Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and <i>ab initio</i> time-dependent density-functional theorycitations
- 2013Measurement of Complex Conductance in the PHz Frequency Range with Subnanometric Spatial Resolution: Application to the Grain Boundary of Monoclinic Hafniacitations
- 2008Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectricscitations
- 2006Influence of electron-beam and ultraviolet treatments on low-k porous dielectricscitations
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article
Measurement of Complex Conductance in the PHz Frequency Range with Subnanometric Spatial Resolution: Application to the Grain Boundary of Monoclinic Hafnia
Abstract
<jats:p>The spatial evolution of local complex conductivity across a grain boundary of hafnia has been measured using energy filtered high-resolution transmission electron microscopy and valence electron energy loss spectroscopy (HRTEM-VEELS). A local increase in the real part of the conductivity and the effective electron density inside the grain boundary is clearly evidenced. This methodology could be advantageously used to study the leakage pathways and the regions susceptible to early dielectric breakdown in the most advanced dielectric stacks, to further optimize the technological developments of this highly demanding industry.</jats:p>