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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Casati, R. |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kim, Hokeun
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article
Performance of Atomic-Layer-Deposited Yttria-Stabilized Zirconia Near Room Temperature
Abstract
<jats:p>The ionic impedance of atomic-layer-deposited yttria-stabilized zirconia thin films was measured in the cross-plane direction in the range 80–300°C. The microstructure of the films was also analyzed using transmission electron microscopy in the high- resolution and scanning modes, and the electrical performance of the films was found to be related to their structural characteristics. We found that the ionic impedance of the films near room temperature was lower than that measured at elevated temperatures, presumably because of proton conduction along the surface of the nanopores in the films.</jats:p>