| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Petersen, Dirch Hjorth
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (33/33 displayed)
- 2024Electron-vacancy scattering in SrNbO3 and SrTiO3
- 2024Deconvolution of heat sources for application in thermoelectric micro four-point probe measurementscitations
- 2023Octahedral distortions in SrNbO3citations
- 2022Review of Micro- and Nanoprobe Metrology for Direct Electrical Measurements on Product Waferscitations
- 2022Determination of thermoelectric properties from micro four-point probe measurementscitations
- 2021Effective electrical resistivity in a square array of oriented square inclusionscitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2017High temperature SU-8 pyrolysis for fabrication of carbon electrodescitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Pyrolytic carbon microelectrodes for impedance based cell sensingcitations
- 2015Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gatecitations
- 2014Electrical characterization of sputtered ZnO:Al films with microprobe technique
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
- 2012In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substratescitations
- 2012Activation and thermal stability of ultra-shallow B+-implants in Ge
- 2012Activation and thermal stability of ultra-shallow B + -implants in Gecitations
- 2012Effect of B + Flux on the electrical activation of ultra-shallow B + implants in Ge
- 2012Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Study of submelt laser induced junction nonuniformities using Therma-Probecitations
- 2008Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctionscitations
- 2008Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctionscitations
- 2008Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxycitations
- 2002Simulated SAM A-scans on multilayer MEMS components
Places of action
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document
Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge
Abstract
<p>The residual implanted dose of ultra-shallow B<sup>+</sup> implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B<sup>+</sup> implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.</p>