• Yoshigoe, Akitaka
• Suemitsu, Maki
• Teraoka, Yuden
• Abe, Shunsuke
• Takahashi, Ryota
• Fukidome, Hirokazu
• Handa, Hiroyuki
• Imaizumi, Kei

Abstract

<jats:p>Epitaxial graphene can be formed on silicon substrates by annealing a 3C-SiC film formed on a silicon substrate in ultrahigh vacuum (G/3C-SiC/Si). In this work, we explore the graphitization process on the 3C-SiC(111)/Si(111) surface by using low-energy electron diffraction and X-ray photoelectron spectroscopy (XPS) and compare them with that on 6H-SiC(0001). Upon annealing at <jats:italic>T</jats:italic>≥1150 °C, the 3C-SiC(111)/Si(111) surface follows the sequence of (√3×√3)R30°, (6√3×6√3)R30°, and (1×1)<jats:sub>graphene</jats:sub> in the surface structures. The C 1s core level according to XPS indicates that a <jats:italic>buffer layer</jats:italic>, identical with that in G/6H-SiC(0001), exists at the G/3C-SiC(111) buffer. These observations strongly suggest that graphitization on the surface of the 3C-SiC(111) face proceeds in a similar manner to that on the Si-terminated hexagonal bulk SiC crystals.</jats:p>

Topics

• surface
• thin film
• x-ray photoelectron spectroscopy
• electron diffraction
• Silicon
• annealing