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Kawashima, Nobuaki
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article
Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution
Abstract
Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature (TG) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at TG = 350 °C was found to exhibit a relatively low saturation mobility (µsat). However, µsat increased from 1 to 14 cm2V-1s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.