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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Alias, Afishah
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2020Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
- 2018Electrical simulation of different photoactive layer thickness on organic heterojunction solar cellcitations
- 2017Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diodecitations
- 2017The Structural and Optical Properties of Poly(Triarylamine) (PTAA) Thin Films Prepared at Different Spin Rate Using Spin Coating Methodcitations
- 2016Annealing heat treatment of Poly(triarylamine) (PTAA) thin films deposited using spin coating
- 2015GROWTH CHARACTERISTIC OF GZO FILM FABRICATED BY RF MAGNETRON SPUTTERING
- 2015Structural properties 3,16-bis triisopropylsilylethynyl (pentacene) (TIPS-pentacene) thin films onto organic dielectric layer using slide coating method
- 2015PREPARATION AND CHARACTERIZATION OF CARBON NANOFIBERS / METAKAOLIN GEOPOLYMER BASED NANOCOMPOSITE
- 2015Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating methodcitations
- 2015EFFECT OF SPUTTERING PRESSURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF ZNO FILMS DEPOSITED ON FLEXIBLE SUBSTRATEcitations
- 2013Effect of [6,6]-Phenyl-C 61 butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistorscitations
- 2011Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solutioncitations
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article
Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution
Abstract
Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature (TG) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at TG = 350 °C was found to exhibit a relatively low saturation mobility (µsat). However, µsat increased from 1 to 14 cm2V-1s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.