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Koike, Masahiro
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article
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Abstract
We investigated the band alignment of hafnium silicon oxynitride (HfSiON) on Si, using reflection electron energy loss spectroscopy (REELS) and X-ray electron spectroscopy (XPS). REELS was found to be effective for determining the bandgap energy of high-k materials. In HfSiON films, although the bandgap (Eg), energy barrier of electrons (ΔEc) and holes (ΔEv) decreased abruptly at high nitrogen concentration, they retained values as large as 1 eV. The bandgap narrowing can be ascribed to Hf–N formation inside HfSiON films. We speculate that HfSiON films are formed by insulating trihafnium tetranitride (Hf3N4) or its pseudo-alloy (Hf3N4)x(HfO2)1-x as short-range order in the material, instead of forming conducting HfN.