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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Murapaka, Chandrasekhar
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Publications (3/3 displayed)
- 2024Deposition pressure-controlled phase tailoring and stability of <i>β</i>-W for spintronic applicationscitations
- 2024Deposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFecitations
- 2023Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient conditioncitations
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article
Deposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFe
Abstract
<jats:p> Spin-to-charge conversion and vice versa due to spin-orbit coupling in ferromagnet-heavy metal heterostructure is of paramount interest for developing energy-efficient spintronic devices. Here, we have systematically investigated the effect of Ar deposition pressure ([Formula: see text] on the tungsten (W) crystalline phase and extracted spin-dependent transport parameters. X-ray diffraction results show that 10[Formula: see text]nm-thick W films exhibit a structural phase transition from a mixed phase of [Formula: see text]-W to a single phase of [Formula: see text]-W as a function of [Formula: see text]. The observed phase transition is due to a decrease in adatom’s energy and surface mobility. Interestingly, only the [Formula: see text]-W phase is found to stabilize when W sputtered on a seed Ni[Formula: see text]Fe[Formula: see text] (Permalloy or Py) film. The growth of [Formula: see text]-W on the seed Py layer could be due to the strain that facilitates the mixed phase. W deposited on the Py layer is shown to be dependent on [Formula: see text], in which the [Formula: see text]-W relative phase fraction is relative. A ferromagnetic resonance (FMR)-based spin pumping method was employed for spin current injection. The FMR linewidth ([Formula: see text] is enhanced for Py/W compared to the bare Py layer due to the spin current transport across the interface. The spin-mixing conductance ([Formula: see text] is found to be a function of the relative phase fraction of W. The extracted [Formula: see text] is [Formula: see text][Formula: see text]m[Formula: see text] for [Formula: see text][Formula: see text]mTorr and [Formula: see text][Formula: see text]m[Formula: see text] for [Formula: see text][Formula: see text]mTorr. From the inverse spin Hall effect (ISHE) measurements, the effective spin Hall angle ([Formula: see text] is estimated to be [Formula: see text] for [Formula: see text]-W rich mixed phase of [Formula: see text]-W, whereas it is [Formula: see text] for [Formula: see text]-W rich [Formula: see text]-W. Our systematic study demonstrates the relatively large effective spin Hall angle via low-longitudinal resistivity by controlling the relative phase fraction of W and helps in developing energy-efficient spintronic devices. </jats:p>