Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2024Deposition pressure-controlled phase tailoring and stability of <i>β</i>-W for spintronic applications3citations
  • 2024Deposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFe1citations
  • 2023Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition3citations

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Mondal, Rohiteswar
1 / 1 shared
Pappu, Yaswanth Sai
2 / 2 shared
Peddiraju, Vivek C.
1 / 1 shared
Devapriya, M. S.
2 / 2 shared
Pradhan, Jhantu
1 / 1 shared
Haldar, Arabinda
1 / 1 shared
Sriram, K.
1 / 1 shared
Panigrahi, Brahmaranjan
1 / 1 shared
Kumar, Mahesh
1 / 2 shared
Suresh, K. G.
1 / 3 shared
Haldar, Arbinda
1 / 1 shared
Kumar, Pramod
1 / 8 shared
Gautam, Vidushi
1 / 1 shared
Kumar, Rachana
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Maurya, Gyanendra Kumar
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2024
2023

Co-Authors (by relevance)

  • Mondal, Rohiteswar
  • Pappu, Yaswanth Sai
  • Peddiraju, Vivek C.
  • Devapriya, M. S.
  • Pradhan, Jhantu
  • Haldar, Arabinda
  • Sriram, K.
  • Panigrahi, Brahmaranjan
  • Kumar, Mahesh
  • Suresh, K. G.
  • Haldar, Arbinda
  • Kumar, Pramod
  • Gautam, Vidushi
  • Kumar, Rachana
  • Maurya, Gyanendra Kumar
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article

Deposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFe

  • Pappu, Yaswanth Sai
  • Pradhan, Jhantu
  • Haldar, Arabinda
  • Murapaka, Chandrasekhar
  • Sriram, K.
  • Devapriya, M. S.
Abstract

<jats:p> Spin-to-charge conversion and vice versa due to spin-orbit coupling in ferromagnet-heavy metal heterostructure is of paramount interest for developing energy-efficient spintronic devices. Here, we have systematically investigated the effect of Ar deposition pressure ([Formula: see text] on the tungsten (W) crystalline phase and extracted spin-dependent transport parameters. X-ray diffraction results show that 10[Formula: see text]nm-thick W films exhibit a structural phase transition from a mixed phase of [Formula: see text]-W to a single phase of [Formula: see text]-W as a function of [Formula: see text]. The observed phase transition is due to a decrease in adatom’s energy and surface mobility. Interestingly, only the [Formula: see text]-W phase is found to stabilize when W sputtered on a seed Ni[Formula: see text]Fe[Formula: see text] (Permalloy or Py) film. The growth of [Formula: see text]-W on the seed Py layer could be due to the strain that facilitates the mixed phase. W deposited on the Py layer is shown to be dependent on [Formula: see text], in which the [Formula: see text]-W relative phase fraction is relative. A ferromagnetic resonance (FMR)-based spin pumping method was employed for spin current injection. The FMR linewidth ([Formula: see text] is enhanced for Py/W compared to the bare Py layer due to the spin current transport across the interface. The spin-mixing conductance ([Formula: see text] is found to be a function of the relative phase fraction of W. The extracted [Formula: see text] is [Formula: see text][Formula: see text]m[Formula: see text] for [Formula: see text][Formula: see text]mTorr and [Formula: see text][Formula: see text]m[Formula: see text] for [Formula: see text][Formula: see text]mTorr. From the inverse spin Hall effect (ISHE) measurements, the effective spin Hall angle ([Formula: see text] is estimated to be [Formula: see text] for [Formula: see text]-W rich mixed phase of [Formula: see text]-W, whereas it is [Formula: see text] for [Formula: see text]-W rich [Formula: see text]-W. Our systematic study demonstrates the relatively large effective spin Hall angle via low-longitudinal resistivity by controlling the relative phase fraction of W and helps in developing energy-efficient spintronic devices. </jats:p>

Topics
  • Deposition
  • impedance spectroscopy
  • surface
  • resistivity
  • mobility
  • x-ray diffraction
  • thin film
  • crystalline phase
  • phase transition
  • tungsten