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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Das, Arijit
IMEC
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2018Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO3 interfacecitations
- 2018Electric Field Modulation of Spin Accumulation in Nb-doped SrTiO3 with Ni/AlOx Spin Injection Contactscitations
- 2018Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature
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article
Electric Field Modulation of Spin Accumulation in Nb-doped SrTiO3 with Ni/AlOx Spin Injection Contacts
Abstract
We demonstrate an electric field control of spin lifetime at room temperature, across a semiconducting interface of Nb:STO using Ni/AlOx as spin injection contacts. We achieve this by a careful tailoring of the potential landscape in Nb:STO, driven by the strong response of the intrinsically large dielectric permittivity in STO to electric fields. The built-in electric field at the Schottky interface with Nb: STO tunes the intrinsic Rashba spin-orbit fields leading to a bias dependence of the spin lifetime in Nb:STO. Such an electric field driven modulation of spin accumulation has not been reported earlier using conventional semiconductors. This not only underpins the necessity of a careful design of the spin injection contacts but also establishes the importance of Nb:STO as a rich platform for exploring spin-orbit driven phenomena in complex oxide based spintronic devices.