| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mannan, Samjid Hassan
King's College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2020High bond strength Cu joints fabricated by rapid and pressureless in situ reduction-sintering of Cu nanoparticlescitations
- 2019Influence of Zn concentration on interfacial intermetallics during liquid and solid state reaction of hypo and hypereutectic Sn-Zn solder alloyscitations
- 2019Arresting High-Temperature Microstructural Evolution inside Sintered Silvercitations
- 2017Review of silver nanoparticle based die attach materials for high power/temperature applicationscitations
- 2016Microstructural evolution of sintered silver at elevated temperaturescitations
- 2016Reactions in electrodeposited Cu/Sn and Cu/Ni/Sn nanoscale multilayers for interconnectscitations
- 2016Thermally stable high temperature die attach solutioncitations
- 2015Electromigration Phenomena in Sintered Nanoparticle Ag Systems Under High Current Density
- 2015Factors influencing microstructural evolution in nanoparticle sintered Ag die attachcitations
- 2014A review: On the development of low melting temperature Pb-free solderscitations
- 2013Electronics Assembly and High Temperature Reliability Using Sn-3.8Ag-0.7Cu Solder Paste With Zn Additivescitations
- 2012Disabling of Nanoparticle Effects at Increased Temperature in Nanocomposite Solderscitations
- 2012Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reactioncitations
- 2012Intermetallic compound growth suppression at high temperature in SAC solders with Zn addition on Cu and Ni-P substratescitations
- 2010Reactions of Sn-3.5Ag-Based Solders Containing Zn and Al Additions on Cu and Ni(P) Substrates citations
- 2009Cross-Section Preparation for Solder Joints and MEMS Device Using Argon Ion Beam Millingcitations
- 2008Interfacial reaction between molten Sn-Bi based solders and electroless Ni-P coatings for liquid solder interconnectscitations
- 2007Dissolution and interfacial reaction of Nb in contact with the molten 521n-48Sn soldercitations
- 2007Failure mechanisms of dummy IGBT assembles constructed using liquid In-Sn/Nb system
- 2006Interfacial reactions between molten Sn-Bi-X solders and Cu substrates for liquid solder interconnectscitations
- 2006Lifetime of solid metals in contact with liquid solders for high-temperature liquid solder assembliescitations
- 2006Edge effects in intermetallic compound crystal growth between Nb and molten 52In-48Sn solder
- 2005Study of intermetallic crystal growth between Nb and molten 52In-48Sn soldercitations
- 2004Materials and processes for implementing high-temperature liquid interconnectscitations
- 2004Dissolution of solids in contact with liquid soldercitations
- 2002Electroless nickel bumping of aluminum bondpads - Part II: Electroless nickel platingcitations
- 2000Solder paste reflow modeling for flip chip assembly
- 2000Investigation of a solder bumping technique for flip-chip interconnection
- 2000Under bump metallisation of fine pitch flip-chip using electroless nickel depositioncitations
Places of action
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article
Under bump metallisation of fine pitch flip-chip using electroless nickel deposition
Abstract
For solder based flip-chip assembly, the deposition of an under bump metallisation (UBM) layer onto the surface of the Al bondpads of the die is the first step in the wafer bumping process. The UBM is necessary, as the fragile Al pad has a tenacious oxide layer that cannot be soldered without the use of strong fluxes and a barrier layer is required to prevent dissolution of the bondpad into the solder during reflow. The requirements of the UBM are therefore to provide a solder wettable surface and to protect the underlying Al bondpad during and after assembly. In addition, the UBM deposition process itself must remove any oxide layers on the bondpads to ensure a low resistance interface between the pad and the UBM. This paper reports an investigation of the electroless nickel deposition process for the under bump metallisation. of wafers that are subsequently to be bumped using solder paste printing. In particular this work has extended the process from previous trials on 225 mum pitch devices to wafers including die with sub 100 mum pitch bondpads. As part of this work, the effect of the various pre-treatment etching processes and zincate activation on the quality of the final electroless nickel bump has been investigated. The use of SEM examination of samples at each stage of the bumping process has been used to aid a detailed understanding of the activation mechanisms and to determine their effects on the electroless nickel bump morphology. In addition, shear testing of bumps has been used to determine the best pre-treatment regime to ensure good adhesion of the electroless nickel to the bondpad. Finally, electrical resistance measurements of bumped die have been used to confirm that the pre-treatment procedures are producing a low resistance interface between the Al and electroless nickel.