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Mahajan, Ashok
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article
Investigation of electrical properties of peald-deposited Ti/Al<sub>2</sub>O<sub>3</sub>/Al/Si MIM capacitors
Abstract
<jats:p> MIM devices fabricated with 10-nm thickness of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm<jats:sup>2</jats:sup> for as-deposited and annealed films. </jats:p>