Materials Map

Discover the materials research landscape. Find experts, partners, networks.

  • About
  • Privacy Policy
  • Legal Notice
  • Contact

The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

×

Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

To Graph

1.080 Topics available

To Map

977 Locations available

693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

←

Page 1 of 27758

→
←

Page 1 of 0

→
PeopleLocationsStatistics
Naji, M.
  • 2
  • 13
  • 3
  • 2025
Motta, Antonella
  • 8
  • 52
  • 159
  • 2025
Aletan, Dirar
  • 1
  • 1
  • 0
  • 2025
Mohamed, Tarek
  • 1
  • 7
  • 2
  • 2025
Ertürk, Emre
  • 2
  • 3
  • 0
  • 2025
Taccardi, Nicola
  • 9
  • 81
  • 75
  • 2025
Kononenko, Denys
  • 1
  • 8
  • 2
  • 2025
Petrov, R. H.Madrid
  • 46
  • 125
  • 1k
  • 2025
Alshaaer, MazenBrussels
  • 17
  • 31
  • 172
  • 2025
Bih, L.
  • 15
  • 44
  • 145
  • 2025
Casati, R.
  • 31
  • 86
  • 661
  • 2025
Muller, Hermance
  • 1
  • 11
  • 0
  • 2025
Kočí, JanPrague
  • 28
  • 34
  • 209
  • 2025
Šuljagić, Marija
  • 10
  • 33
  • 43
  • 2025
Kalteremidou, Kalliopi-ArtemiBrussels
  • 14
  • 22
  • 158
  • 2025
Azam, Siraj
  • 1
  • 3
  • 2
  • 2025
Ospanova, Alyiya
  • 1
  • 6
  • 0
  • 2025
Blanpain, Bart
  • 568
  • 653
  • 13k
  • 2025
Ali, M. A.
  • 7
  • 75
  • 187
  • 2025
Popa, V.
  • 5
  • 12
  • 45
  • 2025
Rančić, M.
  • 2
  • 13
  • 0
  • 2025
Ollier, Nadège
  • 28
  • 75
  • 239
  • 2025
Azevedo, Nuno Monteiro
  • 4
  • 8
  • 25
  • 2025
Landes, Michael
  • 1
  • 9
  • 2
  • 2025
Rignanese, Gian-Marco
  • 15
  • 98
  • 805
  • 2025

Gao, Q.

  • Google
  • 22
  • 64
  • 1351

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (22/22 displayed)

  • 2023Signature of quantum criticality in cuprates by charge density fluctuations25citations
  • 2016Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.454citations
  • 2016Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.163citations
  • 2016Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer9citations
  • 2016Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.33citations
  • 2016III-V compound semiconductor nanowires for optoelectronic device applications1citations
  • 2016Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires85citations
  • 2016Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.99citations
  • 2013Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization99citations
  • 2012Effect of plasmonic nanoparticles on the quantum efficiency of III-V semiconductor nanowire emitterscitations
  • 2012Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowirescitations
  • 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al xGa 1-xAs core-shell nanowires85citations
  • 2012Long minority carrier lifetime in Au-catalyzed GaAs/Al(x)Ga(1-x)As core-shell nanowires85citations
  • 2011III-V compound semiconductor nanowires for optoelectronic device applications1citations
  • 2011Compound semiconductor nanowires for optoelectronic device applicationscitations
  • 2011Growth and properties of III-V compound semiconductor heterostructure nanowires33citations
  • 2009III-V compound semiconductor nanowirescitations
  • 2009III-V compound semiconductor nanowires3citations
  • 2009Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures166citations
  • 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devicescitations
  • 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devicescitations
  • 2003Implant isolation of Zn-doped GaAs epilayers10citations

Places of action

Chart of shared publication
Y., Peng Y.
1 / 1 shared
Grilli, M.
1 / 1 shared
Ghiringhelli, G.
1 / 10 shared
Lombardi, F.
1 / 13 shared
Camisa, P.
1 / 1 shared
Zhou, X.
1 / 56 shared
Schierle, E.
1 / 4 shared
Braicovich, L.
1 / 7 shared
Nag, A.
1 / 6 shared
Martinelli, L.
1 / 12 shared
Arpaia, R.
1 / 4 shared
M., Sala M.
1 / 1 shared
Caprara, S.
1 / 2 shared
Bauch, T.
1 / 4 shared
Li, Q.
1 / 24 shared
Di Castro, C.
1 / 1 shared
Garcia-Fernandez, M.
1 / 4 shared
-J., Zhou K.
1 / 1 shared
B., Brookes N.
1 / 2 shared
Jagadish, C.
11 / 23 shared
Joyce, H.
5 / 6 shared
Wong-Leung, J.
6 / 8 shared
Tan, H.
6 / 8 shared
Yong, C.
2 / 3 shared
Lloyd-Hughes, J.
2 / 9 shared
Johnston, M.
2 / 30 shared
Docherty, C.
1 / 1 shared
Paiman, S.
9 / 10 shared
Herz, L.
2 / 23 shared
Duscher, G.
1 / 2 shared
Ge, J.
1 / 2 shared
Kaveh, M.
1 / 2 shared
Wagner, H. P.
1 / 1 shared
Smith, L.
1 / 6 shared
Yarrison-Rice, J.
2 / 2 shared
Kang, J.
1 / 8 shared
Jackson, H.
1 / 1 shared
Zou, J.
4 / 17 shared
Kim, Y.
6 / 16 shared
Breuer, S.
6 / 10 shared
Parkinson, P.
6 / 9 shared
Jiang, N.
3 / 3 shared
Etheridge, J.
2 / 3 shared
Zheng, C.
1 / 9 shared
Mokkapati, S.
3 / 5 shared
Zheng, C. L.
1 / 1 shared
Jiang, Nian
3 / 5 shared
Saxena, D.
1 / 1 shared
Tan, H. H.
2 / 6 shared
Kang, J. H.
2 / 2 shared
Jackson, H. E.
7 / 16 shared
Joyce, H. J.
5 / 7 shared
Yarrison-Rice, J. M.
7 / 7 shared
Smith, L. M.
7 / 15 shared
Zou, Jin
5 / 26 shared
Tan, H. Hoe
2 / 4 shared
Zhang, X.
5 / 65 shared
Jackson, He
1 / 2 shared
Gass, R.
1 / 1 shared
Smith, Lm
1 / 2 shared
Tan, Hh
1 / 5 shared
Pemasiri, K.
1 / 1 shared
Montazeri, M.
1 / 1 shared
Deenapanray, Prakash N. K.
1 / 4 shared
Chart of publication period
2023
2016
2013
2012
2011
2009
2003

Co-Authors (by relevance)

  • Y., Peng Y.
  • Grilli, M.
  • Ghiringhelli, G.
  • Lombardi, F.
  • Camisa, P.
  • Zhou, X.
  • Schierle, E.
  • Braicovich, L.
  • Nag, A.
  • Martinelli, L.
  • Arpaia, R.
  • M., Sala M.
  • Caprara, S.
  • Bauch, T.
  • Li, Q.
  • Di Castro, C.
  • Garcia-Fernandez, M.
  • -J., Zhou K.
  • B., Brookes N.
  • Jagadish, C.
  • Joyce, H.
  • Wong-Leung, J.
  • Tan, H.
  • Yong, C.
  • Lloyd-Hughes, J.
  • Johnston, M.
  • Docherty, C.
  • Paiman, S.
  • Herz, L.
  • Duscher, G.
  • Ge, J.
  • Kaveh, M.
  • Wagner, H. P.
  • Smith, L.
  • Yarrison-Rice, J.
  • Kang, J.
  • Jackson, H.
  • Zou, J.
  • Kim, Y.
  • Breuer, S.
  • Parkinson, P.
  • Jiang, N.
  • Etheridge, J.
  • Zheng, C.
  • Mokkapati, S.
  • Zheng, C. L.
  • Jiang, Nian
  • Saxena, D.
  • Tan, H. H.
  • Kang, J. H.
  • Jackson, H. E.
  • Joyce, H. J.
  • Yarrison-Rice, J. M.
  • Smith, L. M.
  • Zou, Jin
  • Tan, H. Hoe
  • Zhang, X.
  • Jackson, He
  • Gass, R.
  • Smith, Lm
  • Tan, Hh
  • Pemasiri, K.
  • Montazeri, M.
  • Deenapanray, Prakash N. K.
OrganizationsLocationPeople

article

III-V compound semiconductor nanowires for optoelectronic device applications

  • Kang, J. H.
  • Jackson, H. E.
  • Gao, Q.
  • Joyce, H. J.
  • Yarrison-Rice, J. M.
  • Paiman, S.
  • Smith, L. M.
  • Zou, J.
  • Kim, Y.
Abstract

<p>GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.</p>

Topics
  • nanoparticle
  • compound
  • semiconductor
  • defect
  • chemical vapor deposition