• Kang, J. H.
• Jackson, H. E.
• Gao, Q.
• Joyce, H. J.
• Yarrison-Rice, J. M.
• Paiman, S.
• Smith, L. M.
• Zou, J.
• Kim, Y.

Abstract

<p>GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.</p>

Topics

• nanoparticle
• compound
• semiconductor
• defect
• chemical vapor deposition