| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Smith, L. M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2009III-V compound semiconductor nanowires
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2008Tuning spin properties of excitons in single CdTe quantum dots by annealingcitations
- 2005Sensitivity of exciton spin relaxation in quantum dots to confining potentialcitations
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Tuning the optical and magnetic properties of II-VI quantum dots by post-growth rapid thermal annealingcitations
- 2004Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dotscitations
- 2003Tuning the properties of magnetic CdMnTe quantum dotscitations
- 2003Optical properties of semimagnetic quantum dots
- 2003Optical properties of annealed CdTe self-assembled quantum dotscitations
Places of action
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article
III-V compound semiconductor nanowires for optoelectronic device applications
Abstract
<p>GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB, can also be engineered by carefully controlling the V/III ratio and catalyst size.</p>