693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marty, Alain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Light-driven Electrodynamics and Demagnetization in Fe$_n$GeTe$_2$ (n = 3, 5) Thin Films
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin-charge conversion in van der Waals heterostructurescitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Spin-dependent transport characterization in metallic lateral spin valves using one-dimensional and three-dimensional modelingcitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperaturescitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2016Spin Hall effect in AuW alloys
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2007Electric field-induced modification of magnetism in thin-film ferromagnetscitations
- 2006High-Curie-temperature ferromagnetism in self-organized GeMn nanocolumns
Places of action
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article
Calculation method of spin accumulations and spin signals in nanostructures using spin resistors
Abstract
International audience ; Determination of spin accumulations and spin currents is essential for a deep understanding of spin transport in nanostructures and further optimization of spintronic devices. So far, they are easily obtained using different approaches in nanostructures composed of few elements; however their calculation becomes complicated as the number of elements increases. Here, we propose a 1-D spin resistor approach to calculate analytically spin accumulations, spin currents and magneto-resistances in heterostructures. Our method, particularly applied to multi-terminal metallic nanostructures, provides a fast and systematic mean to determine such spin properties in structures where conventional methods remain complex.