| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jaffrès, Henri
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Large chiral orbital texture and orbital Edelstein effect in Co/Al heterostructurecitations
- 2024Controlling the helicity of light by electrical magnetization switchingcitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin–phonon interactionscitations
- 2021Spin injection efficiency at metallic interfaces probed by THz emission spectroscopycitations
- 2020Ultrafast spin-currents and charge conversion at 3d-5d interfaces probed by time-domain terahertz spectroscopycitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2016Spin Hall effect in AuW alloys
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
Places of action
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article
Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands
Abstract
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.