| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Attané, Jean-Philippe
Université Grenoble Alpes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2023Electrical characterization of the azimuthal anisotropy of $(mathrm{Ni}_xmathrm{Co}_{1-x})mathrm{B}$-based ferromagnetic nanotubescitations
- 2022Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline fieldcitations
- 2021Spin–Charge Interconversion in KTaO 3 2D Electron Gasescitations
- 2021Spin–Charge Interconversion in KTaO3 2D Electron Gasescitations
- 2021Room-temperature ferroelectric switching of spin-to-charge conversion in GeTecitations
- 2020Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO 3citations
- 2019Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensationcitations
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Geometrical control of pure spin current induced domain wall depinning
- 2016Spin Hall effect in AuW alloys
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2010Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization.citations
Places of action
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article
Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands
Abstract
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.