• Raniero, W.
• Riccetto, S.
• Boldrini, V.
• De Salvador, D.
• Carturan, S.
• Napolitani, E.
• Sgarbossa, Francesco
• Napoli, D. R.
• Milazzo, R.
• Andrighetto, A.
• Scarpa, D.
• Maggioni, G.

Abstract

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin (<= 100 nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

Topics

• Deposition
• impedance spectroscopy
• morphology
• surface
• defect
• annealing
• selective ion monitoring
• Germanium