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Sgarbossa, Francesco
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Publications (7/7 displayed)
- 2024New method for the deposition of thin films on the inner walls of a deep blind hole: Application to semiconductor doping
- 2023Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser meltingcitations
- 2023Pulsed laser annealed Ga hyperdoped poly‐Si/SiOx passivating contacts for high‐efficiency monocrystalline Si solar cellscitations
- 2023Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealingcitations
- 2022The GALORE projectcitations
- 2018Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectorscitations
- 2018Diffusion doping of germanium by sputtered antimony sourcescitations
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article
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors
Abstract
A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin (<= 100 nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.