| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Şimăndan, Iosif - Daniel
National Institute of Materials Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputteringcitations
- 2021Synthesis and Characterization of Cu2ZnSnS4 Thin Films Obtained by Combined Magnetron Sputtering and Pulsed Laser Depositioncitations
- 2021Influence of Deposition Method on the Structural and Optical Properties of Ge2Sb2Te5citations
- 2021The Effect of the Deposition Method on the Structural and Optical Properties of ZnS Thin Filmscitations
- 2020Secondary Crystalline Phases Influence on Optical Properties in Off-Stoichiometric Cu2S–ZnS–SnS2 Thin Filmscitations
- 2014Simulation of the structure of GeAs<sub>4</sub>Te<sub>7</sub> chalcogenide materials during memory switchingcitations
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article
Simulation of the structure of GeAs<sub>4</sub>Te<sub>7</sub> chalcogenide materials during memory switching
Abstract
<jats:p> The complex chalcogenides with excellent memory switching properties are mainly situated close to the border of glass formation domain. The simulation of the structural changes occurring during the memory switching process of a ternary chalcogenide composition has been carried out. The transition of a high resistivity GeAs<jats:sub>4</jats:sub>Te<jats:sub>7</jats:sub> amorphous cluster with 120 atoms to a low resistivity crystalline cluster was analyzed. The coordination of atoms changes from that corresponding to 8-N coordination rule (two for tellurium, three for arsenic, and four for germanium) in the amorphous phase to six (the same for all atoms) in metastable crystalline phase. Because of spatial constraints exercised by the amorphous matrix, the amorphous cluster cannot expand. In these circumstances Te atoms seem to be over-coordinated (up to sixfold-coordinated). During the switching process, the atoms are moving on distances up to 4.0 Å. The average displacement is of 2.36 Å. </jats:p>