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article
Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures
Abstract
In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous thin films at very low temperature. In fact, our investigation re-analyzed the experimental measurements of RexSi1 – x obtained by K.G. Lisunov et al. On the insulating side of the MIT, the electrical conductivity can be interpreted by the existence of the variable range-hopping regime. However, on the metallic side of the MIT, the electrical conductivity is mainly due to electron–electron interactions and low localization effects.