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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Echchelh, Adil
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Topics
Publications (7/7 displayed)
- 2020Thermal Characterization and Improvement of Curing Stage in Resin Transfer Molding Processcitations
- 2020Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperaturescitations
- 2018An Optimized Control Volume/Finite Element Method (CV/FEM) for Non-Isothermal Liquid Composite Molding (LCM) Processcitations
- 2014The identification of effective thermal conductivity for fibrous reinforcement composite by inverse methodcitations
- 2014The identification of effective thermal conductivity for fibrous reinforcement composite by inverse methodcitations
- 2012Optimization of the cycle time in resin transfer molding process by numerical simulationcitations
- 2011A fast computational model to the simulation of non‐isothermal mold filling process in resin transfer moldingcitations
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article
Study of Transport Phenomenon in Amorphous RexSi1 – x Thin Films on the Both Sides of the Metal–Insulator Transition at Very Low Temperatures
Abstract
In this work, we study the electrical conductivity behaviors on the both sides of the metal-insulator transition (MIT) in RexSi1 – x amorphous thin films at very low temperature. In fact, our investigation re-analyzed the experimental measurements of RexSi1 – x obtained by K.G. Lisunov et al. On the insulating side of the MIT, the electrical conductivity can be interpreted by the existence of the variable range-hopping regime. However, on the metallic side of the MIT, the electrical conductivity is mainly due to electron–electron interactions and low localization effects.