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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Godlewski, Szymon
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Publications (6/6 displayed)
- 2019Fluorine-programmed nanozipping to tailored nanographenes on rutile TiO_{2} surfacescitations
- 2019Fluorine-programmed nanozipping to tailored nanographenes on rutile TiO2 surfacescitations
- 2013Construction of atomic-scale logic gates on a surface of hydrogen passivated germaniumcitations
- 2012Multi-probe characterization of 1D and 2D nanostructures assembled on Ge(001) surface by gold atom deposition and annealingcitations
- 2012[11]Anthrahelicene on TiO2 surfacecitations
- 2010Structure of InSb(001) surfacecitations
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article
Fluorine-programmed nanozipping to tailored nanographenes on rutile TiO2 surfaces
Abstract
<jats:p>The rational synthesis of nanographenes and carbon nanoribbons directly on nonmetallic surfaces has been an elusive goal for a long time. We report that activation of the carbon (C)–fluorine (F) bond is a reliable and versatile tool enabling intramolecular aryl-aryl coupling directly on metal oxide surfaces. A challenging multistep transformation enabled by C–F bond activation led to a dominolike coupling that yielded tailored nanographenes directly on the rutile titania surface. Because of efficient regioselective zipping, we obtained the target nanographenes from flexible precursors. Fluorine positions in the precursor structure unambiguously dictated the running of the “zipping program,” resulting in the rolling up of oligophenylene chains. The high efficiency of the hydrogen fluoride zipping makes our approach attractive for the rational synthesis of nanographenes and nanoribbons directly on insulating and semiconducting surfaces.</jats:p>