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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Hone, James
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Publications (10/10 displayed)
- 2024Width-Dependent Growth of Atomically Thin Quantum Nanoribbons
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2022Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assemblycitations
- 2021Chemical Dopant‐Free Doping by Annealing and Electron Beam Irradiation on 2D Materialscitations
- 2019Magic continuum in twisted bilayer WSe2
- 2019Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Controlcitations
- 2016Electron optics with p-n junctions in ballistic graphenecitations
- 2015Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructurescitations
- 2015Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystalscitations
- 2015Photonic and Plasmonic Guided Modes in Graphene-Silicon Photonic Crystalscitations
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article
Electron optics with p-n junctions in ballistic graphene
Abstract
<jats:p>Electrons transmitted across a ballistic semiconductor junction are expected to undergo refraction, analogous to light rays across an optical boundary. In graphene, the linear dispersion and zero-gap band structure admit highly transparent p-n junctions by simple electrostatic gating. Here, we employ transverse magnetic focusing to probe the propagation of carriers across an electrostatically defined graphene junction. We find agreement with the predicted Snell’s law for electrons, including the observation of both positive and negative refraction. Resonant transmission across the p-n junction provides a direct measurement of the angle-dependent transmission coefficient. Comparing experimental data with simulations reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing electron optics based on graphene p-n junctions.</jats:p>