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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jeon, Jae-Chun
Max Planck Institute of Microstructure Physics
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Dynamic manipulation of chiral domain wall spacing for advanced spintronic memory and logic devices
- 2023Generation of out-of-plane polarized spin current by spin swappingcitations
- 2023Generation of out-of-plane polarized spin current by spin swapping
- 2022Local and global energy barriers for chiral domain walls in synthetic antiferromagnet–ferromagnet lateral junctionscitations
- 2022Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torquecitations
- 2022Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque
- 2016Current dependence of colossal anisotropic magnetoresistance in La0.3Pr0.4Ca0.3MnO3 microbridgescitations
- 2015Low field colossal anisotropic magnetoresistance in spatially confined electronically phase separated La0.3Pr0.4Ca0.3MnO3 microbridgescitations
Places of action
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article
Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque
Abstract
<jats:p>The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn<jats:sub>3</jats:sub>Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn<jats:sub>3</jats:sub>Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.</jats:p>