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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Huang, Wenchao
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2017Understanding charge transport in lead iodide perovskite thin-film field-effect transistorscitations
- 2017Influence of Fullerene Acceptor on the Performance, Microstructure, and Photophysics of Low Bandgap Polymer Solar Cellscitations
- 2017Isolating and quantifying the impact of domain purity on the performance of bulk heterojunction solar cellscitations
- 2016Enhancing the Optoelectronic Performance of Perovskite Solar Cells via a Textured CH3NH3PbI3 Morphologycitations
- 2016Metal Evaporation-Induced Degradation of Fullerene Acceptors in Polymer/Fullerene Solar Cellscitations
- 2016Impact of Fullerene Mixing Behavior on the Microstructure, Photophysics, and Device Performance of Polymer/Fullerene Solar Cellscitations
- 2016Enhancing the optoelectronic performance of perovskite solar cells via a textured CH3NH3PbI3 morphologycitations
- 2014Gas-assisted preparation of lead iodide perovskite films consisting of a monolayer of single crystalline grains for high efficiency planar solar cellscitations
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article
Understanding charge transport in lead iodide perovskite thin-film field-effect transistors
Abstract
<p>Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI<sub>3</sub>). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (m<sub>FET</sub>) of 0.5 cm<sup>2</sup>/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA<sup>+</sup> cations, and thermal vibrations of the lead halide inorganic cages.</p>