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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Senanayak, Satyaprasad P.
University of Cambridge
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Boron‐Thioketonates: A New Class of S,O‐Chelated Boranes as Acceptors in Optoelectronic Devicescitations
- 2023Direct Observation of Contact Reaction Induced Ion Migration and its Effect on Non-Ideal Charge Transport in Lead Triiodide Perovskite Field-Effect Transistors.
- 2022Charge transport in mixed metal halide perovskite semiconductors.
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Filmscitations
- 2020Anisotropy of Charge Transport in a Uniaxially Aligned Fused Electron-Deficient Polymer Processed by Solution Shear Coating.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020How Exciton Interactions Control Spin-Depolarization in Layered Hybrid Perovskitescitations
- 2019Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices.
- 2018Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.
- 2017Understanding charge transport in lead iodide perovskite thin-film field-effect transistorscitations
Places of action
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article
Understanding charge transport in lead iodide perovskite thin-film field-effect transistors
Abstract
<p>Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI<sub>3</sub>). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (m<sub>FET</sub>) of 0.5 cm<sup>2</sup>/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA<sup>+</sup> cations, and thermal vibrations of the lead halide inorganic cages.</p>