Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit4citations
  • 2008A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN59citations
  • 2008Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambient15citations

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Chart of shared publication
Corre, Alain Le
1 / 13 shared
Rogers, D. J.
3 / 5 shared
Durand, Olivier
1 / 40 shared
Létoublon, Antoine
1 / 39 shared
Cornet, Charles
1 / 61 shared
Bayram, C.
1 / 3 shared
Razeghi, M.
2 / 5 shared
Morrod, J.
1 / 2 shared
Demazeau, Gérard
1 / 18 shared
Hassani, S.
1 / 3 shared
Prior, K. A.
1 / 2 shared
Look, D. C.
1 / 3 shared
Minder, K.
1 / 2 shared
Largeteau, Alain
1 / 31 shared
Lusson, Alain
1 / 8 shared
Chart of publication period
2011
2008

Co-Authors (by relevance)

  • Corre, Alain Le
  • Rogers, D. J.
  • Durand, Olivier
  • Létoublon, Antoine
  • Cornet, Charles
  • Bayram, C.
  • Razeghi, M.
  • Morrod, J.
  • Demazeau, Gérard
  • Hassani, S.
  • Prior, K. A.
  • Look, D. C.
  • Minder, K.
  • Largeteau, Alain
  • Lusson, Alain
OrganizationsLocationPeople

document

Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit

  • Corre, Alain Le
  • Rogers, D. J.
  • Teherani, F. Hosseini
  • Durand, Olivier
  • Létoublon, Antoine
  • Cornet, Charles
Abstract

X-ray scattering methods were applied to the study of thin mosaic ZnO layers deposited by Pulsed Laser Deposition on c-Al2O3 substrates and thin mosaic GaP layers deposited by Molecular Beam Epitaxy (MBE) on Si(001) substrates. For both systems, High Resolution (HR) studies revealed two components in the ω scans (transverse scans) which were not resolved in conventional "open-detector" ω rocking curves: a narrow, resolution-limited, peak, characteristic of longrange correlation, and a broad peak, due to defect-related diffuse-scattering giving a limited transverse structural correlation length. Thus, for such mosaic films, the conventional ω rocking curve Full Width at Half Maximum linewidth was found to be inadapted as an overall figure-of-merit for the structural quality, in that, first, the different contributions were not meaningfully represented, and, second, the linewidth depends more strongly on the film thickness than on the dispersion in the crystallographic orientation or the defect density. A "Williamson-Hall like" integral breadth (IB) metric for the HR (00.l) transverse-scans was developed as a reliable, fast, accurate and robust alternative to the rocking curve linewidth for routine non-destructive testing of such mosaic thin films. For ZnO/c-Al2O3 films of various thicknesses, it was deduced from the transverse scans profiles that this finite lateral correlation length may arise from misfit dislocations which accommodate the lattice-mismatch at the film-substrate interface. This WHL method is shown to be a generic approach applicable to the study of other mosaic, epitaxial, thin-film systems as illustrated through the study of mosaic GaP thin films grown by MBE on Si(001) 4°-off substrates. For this heterogeneous system, it was found from the transverse scan profiles around (002) and (006) that anti-phase crystalline domains can be evidenced. A finite correlation length associated with lateral anti-phase domain size was proposed.

Topics
  • density
  • impedance spectroscopy
  • dispersion
  • phase
  • thin film
  • dislocation
  • pulsed laser deposition
  • X-ray scattering