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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Corre, Alain Le
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Topics
Publications (13/13 displayed)
- 2020Determination of photo-induced Seebeck coefficient for hot carrier solar cell applications
- 2018A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
- 2017Indium content impact on structural and optical properties of (In,Ga)As/GaP quantum dots
- 2015Quantitative evaluation of microtwins and antiphase defects in GaP/Sinanolayers for a III–V photonics platform on siliconusing a laboratory Xray diffraction setupcitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2012Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scatteringcitations
- 2011X-ray study of antiphase domains and their stability in MBE grown GaP on Si.citations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2009Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on Silicon
- 2006Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µmcitations
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document
Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit
Abstract
X-ray scattering methods were applied to the study of thin mosaic ZnO layers deposited by Pulsed Laser Deposition on c-Al2O3 substrates and thin mosaic GaP layers deposited by Molecular Beam Epitaxy (MBE) on Si(001) substrates. For both systems, High Resolution (HR) studies revealed two components in the ω scans (transverse scans) which were not resolved in conventional "open-detector" ω rocking curves: a narrow, resolution-limited, peak, characteristic of longrange correlation, and a broad peak, due to defect-related diffuse-scattering giving a limited transverse structural correlation length. Thus, for such mosaic films, the conventional ω rocking curve Full Width at Half Maximum linewidth was found to be inadapted as an overall figure-of-merit for the structural quality, in that, first, the different contributions were not meaningfully represented, and, second, the linewidth depends more strongly on the film thickness than on the dispersion in the crystallographic orientation or the defect density. A "Williamson-Hall like" integral breadth (IB) metric for the HR (00.l) transverse-scans was developed as a reliable, fast, accurate and robust alternative to the rocking curve linewidth for routine non-destructive testing of such mosaic thin films. For ZnO/c-Al2O3 films of various thicknesses, it was deduced from the transverse scans profiles that this finite lateral correlation length may arise from misfit dislocations which accommodate the lattice-mismatch at the film-substrate interface. This WHL method is shown to be a generic approach applicable to the study of other mosaic, epitaxial, thin-film systems as illustrated through the study of mosaic GaP thin films grown by MBE on Si(001) 4°-off substrates. For this heterogeneous system, it was found from the transverse scan profiles around (002) and (006) that anti-phase crystalline domains can be evidenced. A finite correlation length associated with lateral anti-phase domain size was proposed.