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Haller, Eugene E.
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Publications (4/4 displayed)
- 2012Tuning structural, electrical, and optical properties of oxide alloyscitations
- 2011Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InNcitations
- 2010Band structure engineering of ZnO1-x Sex alloyscitations
- 2010Band structure engineering of ZnO1-xSex alloyscitations
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document
Band structure engineering of ZnO1-xSex alloys
Abstract
ZnO<sub>1-x</sub>Se<sub>x</sub> films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO<sub>1-x</sub>Se<sub>x</sub> films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes. © 2010 SPIE.