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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gardes, Frederic Y.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 20222D material based optoelectronics by electroplating
- 2019Tuning silicon-rich nitride microring resonances with graphene capacitors for high-performance computing applicationscitations
- 2015Wavelength division demultiplexer and integrated III-V semiconductor Lasers on a silicon photonics platform with microbubble manipulation
- 2015Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectorscitations
- 2014Planar surface implanted diffractive grating couplers in SOIcitations
- 2014Locally erasable couplers for optical device testing in silicon on insulatorcitations
- 2014Silicon diffusion engineering in rapid melt growth of silicon-germanium on insulatorcitations
- 2010Carrier depletion based silicon optical modulatorscitations
- 2010Modulators and photodetectors developed in the framework of the European HELIOS project
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document
Carrier depletion based silicon optical modulators
Abstract
<p>Silicon optical modulators have generated an increasing interest in the recent years, as their performances are crucial to achieve high speed optical links. Among possibilities to achieve optical modulation in silicon-based materials, index variation by free carrier concentration variation has demonstrated good potentiality. High speed and low loss silicon modulators can be obtained by carrier depletion inside lateral PN or PIPIN diodes. When the diode is reverse biased, refractive index variations are obtained and then phase modulation of the guided wave is obtained. Mach-Zehnder interferometers are used to convert phase modulation into intensity modulation. Experimental results are presented for both PN and PIPIN diodes.</p>