Materials Map

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Topics

Publications (1/1 displayed)

  • 2010Hybrid silicon-organic racetrack resonator designs for electro-optical modulation1citations

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Petrov, Alexander Yu.
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Wülbern, Jan Hendrik
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Eich, Manfred
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Prorok, Stefan
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2010

Co-Authors (by relevance)

  • Petrov, Alexander Yu.
  • Wülbern, Jan Hendrik
  • Eich, Manfred
  • Prorok, Stefan
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document

Hybrid silicon-organic racetrack resonator designs for electro-optical modulation

  • Petrov, Alexander Yu.
  • Wülbern, Jan Hendrik
  • Hampe, Jan
  • Eich, Manfred
  • Prorok, Stefan
Abstract

Racetrack resonators based on the silicon-on-insulator platform are proposed for electro-optical modulation. The resonators are functionalized by a cladding of a second order nonlinear optical polymer. Two different concepts for the racetrack design employing different waveguide geometries for quasi-TE and quasi-TM polarization operation are presented. In both resonator designs the electrical contact is established by fully etched segmented electrode sections to allow for an easy fabrication process. For quasi-TM polarization the width of the strip waveguide is optimized to 400 nm. The Q factor of 2000 is measured for a sample with segmented electrode. A loss of 0.4 dB per segmented waveguide is deducted. For the quasi-TE polarization the slot waveguide geometry is optimized to 470 nm total width including a vertical slot of 90 nm width. Only the straight parts of the racetrack are slotted, while the bends are built from strip waveguides. To convert the mode from strip to slot geometry stub like couplers of 100 nm length are employed. The measured Q factor is 550. The in device Pockels coefficient is measured to r<sub>33</sub> = 1 pm/V. This small value indicates a very low poling induced polar order which needs to be improved. This is a topic of current investigation. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Topics
  • impedance spectroscopy
  • polymer
  • Silicon