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Derluyn, Joff
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Publications (9/9 displayed)
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 20141900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removalcitations
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
- 2008AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength rangecitations
- 2006Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistorscitations
- 2005The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaNcitations
- 2005Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layercitations
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document
AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Abstract
We report on the fabrication of Schottky-diode-based Extreme UltraViolet (EUV) photodetectors. The devices were processed on Gallium Nitride (GaN) layers epitaxially grown on 4 inch Silicon (111) substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). Cutoff wavelength was determined together with the spectral responsivity measurements in the Near UltraViolet (NUV) range (200nm to 400nm). Absolute spectral responsivity measurements were performed in the EUV range (5nm to 20nm) with the synchrotron radiation using the facilities of Physikalisch- Technische Bundesanstalt (PTB), located at Berliner Elektronenspeicherring-Gesellschaft fuer Synchrotronstrahlung (BESSY). The described work is done in the framework of the Blind to Optical Light Detectors (BOLD) project supported by the European Space Agency (ESA)....