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Aparicio, P.
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document
Al <SUB>x</SUB>Ga <SUB>1-x</SUB>N focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
Abstract
Metal-Semiconductor-Metal photodiodes were fabricated on epitaxially grown Al <SUB>x</SUB>Ga <SUB>1-x</SUB>N on Si(111). The Aluminium content of the layers grown by means of molecular beam epitaxy (MBE) was 50, 80 and 100%, respectively. The processing was performed by standard microelectronic fabrication techniques like photolithography, wet and dry etching (RIE) and physical and chemical vapor deposition (PVD,CVD). The devices were characterized under illumination in a wavelength range from 400 to 185nm to determine the cut-off wavelength defined by the band-gap energy. Typical figures of merit like spectral responsivity R quantum efficiency η and specific detectivity D* have been extracted from the measurement data....