| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Hughes, Mark A.
University of Salford
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2018High speed chalcogenide glass electrochemical metallization cells with various active metalscitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses ; Analogie mezi fotoluminescencí a změnou typu vodivosti v Bi- a Pb-dotovaných sklechcitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi-and Pb-doped glassescitations
- 2012Direct laser writing of relief diffraction gratings into a bulk chalcogenide glasscitations
- 2011Determination of the oxidation state and coordination of a vanadium doped chalcogenide glasscitations
- 2010The efficiencies of energy transfer from Cr to Nd ions in silicate glassescitations
- 2009Spectral broadening in femtosecond laser written waveguides in chalcogenide glasscitations
- 2009Ultrabroad emission from a bismuth doped chalcogenide glasscitations
- 2007Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glasscitations
- 2007Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glasscitations
- 2007Modified chalcogenide glasses for optical device applications
Places of action
| Organizations | Location | People |
|---|
article
Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
Abstract
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide(GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical dopingconcentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)β], where τ isthe fluorescence lifetime and β is the stretch factor. At low concentrations the lifetime for vanadium and titanium dopedGLS was 30 μs and 67 μs respectively. We validate the use of the stretched exponential model and discuss the possiblemicroscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1%(molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2),where τ1and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast andslow components are 5 μs and 30 μs respectively and for titanium they are 15 μs and 67 μs respectively. We also showthat the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanumoxy-sulphide (GLSO) is 43 μs and 97 μs respectively, which is longer than that in GLS. From this we deduce thatvanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a criticalconcentration they become saturated and low efficiency sulphide sites start to be filled.