| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iii, J. W. Ager
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2012P-type InGaN across entire composition range
- 2011Mg doped InN and confirmation of free holes in InNcitations
- 2009Electrical and electrothermal transport in InNcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Group III-nitride alloys as photovoltaic materialscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Characterization and manipulation of exposed Ge nanocrystals
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Narrow bandgap group III-nitride alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Effect of nitrogen on the band structure of III-N-V alloys
Places of action
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article
Group III-nitride alloys as photovoltaic materials
Abstract
The direct gap of the In<sub>1-x</sub>Ga<sub>x</sub>N alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). This opens the intriguing possibility of using this single ternary alloy system in single or multi-junction (MJ) solar cells. A number of measurements of the intrinsic properties of InN and In-rich In <sub>1-x</sub>Ga<sub>x</sub>N alloys (0 <x <0.63) are presented and discussed here. To evaluate the suitability of In<sub>1-x</sub>Ga<sub>x</sub>N as a material for space applications, extensive radiation damage testing with electron, proton, and alpha particle radiation has been performed. Using the room temperature photoluminescence intensity as a indirect measure of minority carrier lifetime, it is shown that In<sub>1-x</sub>Ga<sub>x</sub>N retains its optoelectronic properties at radiation damage doses at least 2 orders of magnitude higher than the damage thresholds of the materials (GaAs and GaInP) currently used in high efficiency MJ cells. Results are evaluated in terms of the positions of the valence and conduction band edges with respect to the average energy level of broken-bond defects (Fermi level stabilization energy E<sub>FS</sub>). Measurements of the surface electron concentration as a function of x are also discussed in terms of the relative position of E <sub>FS</sub>. The main outstanding challenges in the photovoltaic applications of In<sub>1-x</sub>Ga<sub>x</sub>N alloys, which include developing methods to achieve p-type doping and improving the structural quality of heteroepitaxial films, are also discussed.