| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shan, W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Diluted ZnMnTe oxidecitations
- 2004Synthesis and properties of highly mismatched II-O-VI alloyscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Synthesis and optical properties of II-O-VI highly mismatched alloyscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
- 2000Effect of nitrogen on the band structure of III-N-V alloys
Places of action
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article
Effect of oxygen on the electronic band structure of II-O-VI alloys
Abstract
We have studied the effects of composition and hydrostatic pressure on the direct optical transitions at the Γ point of the Brillouin zone in MBE-grown ZnO<sub>x</sub>Se<sub>1-x</sub> and ion-implantation-synthesized Zn<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> alloys. We observe a large O-induced band-gap reduction and a change in the pressure dependence of the fundamental band gap of the II-O-VI alloys. The effects are similar to those previously observed and extensively studied in highly mismatched III-N-V alloys. Our results are well explained in terms of the band anticrossing model that considers an anticrossing interaction between the highly localized oxygen states and the extended states of the conduction band of II-VI compounds. The O-induced modification of the conduction band structure offers an interesting possibility of using small amounts of O to engineer the optoelectronic properties of group II-O-VI alloys.