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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Iii, J. W. Ager
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2012P-type InGaN across entire composition range
- 2011Mg doped InN and confirmation of free holes in InNcitations
- 2009Electrical and electrothermal transport in InNcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Group III-nitride alloys as photovoltaic materialscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Characterization and manipulation of exposed Ge nanocrystals
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Narrow bandgap group III-nitride alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Effect of nitrogen on the band structure of III-N-V alloys
Places of action
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article
Effect of oxygen on the electronic band structure of II-O-VI alloys
Abstract
We have studied the effects of composition and hydrostatic pressure on the direct optical transitions at the Γ point of the Brillouin zone in MBE-grown ZnO<sub>x</sub>Se<sub>1-x</sub> and ion-implantation-synthesized Zn<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> alloys. We observe a large O-induced band-gap reduction and a change in the pressure dependence of the fundamental band gap of the II-O-VI alloys. The effects are similar to those previously observed and extensively studied in highly mismatched III-N-V alloys. Our results are well explained in terms of the band anticrossing model that considers an anticrossing interaction between the highly localized oxygen states and the extended states of the conduction band of II-VI compounds. The O-induced modification of the conduction band structure offers an interesting possibility of using small amounts of O to engineer the optoelectronic properties of group II-O-VI alloys.