Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2023Persistent optical phenomena in oxide semiconductors1citations
  • 2022Growth and defect characterization of doped and undoped β-Ga2O3 crystals9citations

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Mccluskey, Matthew D.
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Santillan, Macarena
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Ahmed, Syeed E.
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Mccloy, John S.
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Remple, Cassandra
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Weber, Marc H.
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Mccluskey, Matthew
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Scarpulla, Michael
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Dutton, Benjamin
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Swain, Santosh
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2023
2022

Co-Authors (by relevance)

  • Mccluskey, Matthew D.
  • Santillan, Macarena
  • Ahmed, Syeed E.
  • Mccloy, John S.
  • Remple, Cassandra
  • Weber, Marc H.
  • Mccluskey, Matthew
  • Scarpulla, Michael
  • Dutton, Benjamin
  • Swain, Santosh
OrganizationsLocationPeople

document

Persistent optical phenomena in oxide semiconductors

  • Pansegrau, Christopher
  • Mccluskey, Matthew D.
  • Santillan, Macarena
  • Ahmed, Syeed E.
  • Mccloy, John S.
Abstract

The interaction of transparent oxide semiconductors with light is critically important for a range of applications. Persistent effects could be exploited for holographic memory or optically defined circuits. Conversely, they may also be detrimental to device operation. Large, room-temperature persistent photoconductivity (PPC) was discovered in strontium titanate (SrTiO<sub>3</sub>, STO) after annealing in a hydrogen-containing atmosphere. Barium titanate (BaTiO<sub>3</sub>, BTO), a ferroelectric material, was recently found to also exhibit PPC. Room-temperature photodarkening was observed in Cu-doped gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) after exposure to sub-bandgap light. Hydrogen is believed to play a central role in these persistent phenomena. In the proposed model, a photon excites substitutional hydrogen (a proton inside an oxygen vacancy), making the defect unstable. The proton leaves and binds to a host oxygen atom, forming an O-H bond that is observed with infrared spectroscopy. An oxygen vacancy is left behind. Because oxygen vacancies in STO and BTO are shallow donors, this process results in PPC. In β-Ga<sub>2</sub>O<sub>3</sub>:Cu, however, the oxygen vacancy neighbors a Cu acceptor. In that case, photoexcitation results in the rare Cu<sup>3+</sup> state, which absorbs visible light. The effect can be “erased” by annealing at 300-400°C.

Topics
  • impedance spectroscopy
  • Oxygen
  • semiconductor
  • Strontium
  • Hydrogen
  • forming
  • annealing
  • infrared spectroscopy
  • Gallium
  • vacancy
  • Barium
  • photoconductivity