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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shen, Shyh-Chiang
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2021Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrayscitations
- 2014Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substratescitations
- 2013Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substratecitations
- 2007A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substratescitations
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document
Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays
Abstract
Front-illuminated p-i-n GaN-based ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition (MOCVD) on 25 mm dia. bulk Ammono® n-GaN substrate having a low etch pit density (EPD) less than 5 × 10<SUP>4</SUP> [cm<SUP>-2</SUP>] and processed into 6×6 APD arrays. The devices employed N-ion implantation to achieve sidewall passivation. Evaluation of these 6×6 arrays will help to confirm the uniformity of the epitaxial materials and device processing. The maximum avalanche gain reached ~ 3×10<SUP>5</SUP> at the breakdown (current limited). The dark current density was 10<SUP>-9</SUP> A/cm<SUP>2</SUP> at reverse bias up to -20 V and the APDs exhibited a reverse breakdown voltage of 81 +/- 1 V for all 36 devices without any leaky devices, confirming a high uniformity of the growth and fabrication processes....