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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zdunek, Krzysztof
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2021Synthesis of Copper Nitride Layers by the Pulsed Magnetron Sputtering Method Carried out under Various Operating Conditionscitations
- 2020Design of pulsed neon injection in the synthesis of W-B-C films using magnetron sputtering from a surface-sintered single powder cathodecitations
- 2020Surface sintering of tungsten powder targets designed by electromagnetic discharge: A novel approach for film synthesis in magnetron sputteringcitations
- 2019Plasmochemical investigations of DLC/WCx nanocomposite coatings synthesized by gas injection magnetron sputtering techniquecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Relation between modulation frequency of electric power oscillation during pulse magnetron sputtering deposition of MoNx thin filmscitations
- 2018Phase composition of copper nitride coatings examined by the use of X-ray diffraction and Raman spectroscopycitations
- 2018Structure and electrical resistivity dependence of molybdenum thin films deposited by dc modulated pulsed magnetron sputteringcitations
- 2017Reactive sputtering of titanium compounds using the magnetron system with a grounded cathodecitations
- 2017Multi-sided metallization of textile fibres by using magnetron system with grounded cathodecitations
- 2016Determination of sp 3 fraction in ta-C coating using XPS and Raman spectroscopy
- 2016Titanium nitride coatings synthesized by IPD method with eliminated current oscillationscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2010Structure of Fe-Cu coatings prepared by the magnetron sputtering method
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
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booksection
Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
Abstract
The AlN films were deposited using magnetron (Φ = 100 mm) and pulse power supplier (f = 100 kHz, with modulation of f = 2 kHz; current 3 A). Deposition processes were carried out at pressure of 2 Pa and using Ar/N2 gas mixture. The films were deposited on n-type silicon wafers located in parallel to aluminum target, keeping substrate-target distance at 15 cm. Round, titanium electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with aluminum nitride thin films playing the role of the insulator. Measurements of current-voltage (I-V) characteristics of MIS structures after annealing in different temperatures (300°C, 500°C), allowed to determine the leakage current density and critical electric field intensity (EBR) of investigated layers. Capacitance-voltage (C-V) measurements of the structures allowed to obtain the dielectric constant value (εri) of the films. Ellipsometric measurements allowed to obtain properties of deposited layer like thickness (29 nm), refraction index (1.855) and energy band gap (5.667 eV). Films’ microstructure was additionally studied using scanning electron microscope (SEM) and grazing X-ray diffraction (GXRD).