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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Szmidt, Jan
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film
- 2020Hydrogen sensor based on field effect transistor with C-Pd layercitations
- 2020Field effect transistor with thin AlOxNy film as gate dielectric
- 2019Technology and characterization of ISFET structures with graphene membranecitations
- 2019Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substratescitations
- 2018Capillary Sensors with UV-Forced Degradation and Fluorescence Reading of Chemical Stability and Polycyclic Aromatic Hydrocarbons Presence in Diesel Fuels
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2015Depth Profile Analysis of Phosphorus Implanted SiC Structurescitations
- 2013Application of scanning microscopy to study correlation between thermal properties and morphology of BaTiO3 thin filmscitations
- 2013Plasma etching of aluminum nitride thin films prepared by magnetron sputtering method
- 2013Characterization of thin Gd2O3 magnetron sputtered layers citations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2009Electric Characterization and Selective Etching of Aluminum Oxidecitations
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
- 2006Optical fiber switch for sensor networks: design principles
- 2001Electronic properties of unipolar heterostructures amorphous carbon diamond - amorphous carbon
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booksection
Influence of annealing on electronic properties of thin AlN films deposited by magnetron sputtering method on silicon substrates
Abstract
The AlN films were deposited using magnetron (Φ = 100 mm) and pulse power supplier (f = 100 kHz, with modulation of f = 2 kHz; current 3 A). Deposition processes were carried out at pressure of 2 Pa and using Ar/N2 gas mixture. The films were deposited on n-type silicon wafers located in parallel to aluminum target, keeping substrate-target distance at 15 cm. Round, titanium electrodes were evaporated on the top of deposited layers. Thus, metal-insulator-semiconductor (MIS) structures were created with aluminum nitride thin films playing the role of the insulator. Measurements of current-voltage (I-V) characteristics of MIS structures after annealing in different temperatures (300°C, 500°C), allowed to determine the leakage current density and critical electric field intensity (EBR) of investigated layers. Capacitance-voltage (C-V) measurements of the structures allowed to obtain the dielectric constant value (εri) of the films. Ellipsometric measurements allowed to obtain properties of deposited layer like thickness (29 nm), refraction index (1.855) and energy band gap (5.667 eV). Films’ microstructure was additionally studied using scanning electron microscope (SEM) and grazing X-ray diffraction (GXRD).