| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Karjalainen, Antti
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Publications (6/6 displayed)
- 2021Defect identification in complex oxides: Positron annihilation spectroscopy of β-Ga₂O₃ and SrTiO₃ ; Rakennevirheiden tunnistus monimutkaisissa puolijohdemateriaaleissa: positroniannihilaatiospektroskopia β-Ga₂O₃:ssa ja SrTiO₃:ssacitations
- 2021Defect identification in complex oxides: Positron annihilation spectroscopy of β-Ga₂O₃ and SrTiO₃
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
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document
Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopy
Abstract
We have applied positron annihilation spectroscopy to study vacancy-type defects in unintentionally doped and Si and Sn doped beta-Ga2O(3) homoepitaxial thin films grown by metal-organic chemical vapor deposition (MOCVD). We detect Ga vacancy related defects at high concentrations in semi-insulating and highly resistive material, while conductive (n-type) material exhibits very low Ga vacancy concentrations. These findings show that Ga vacancies can act as efficient electrical compensators for n-type conductivity, but their concentrations can be suppressed by controlling the growth environment, leading to efficient n-type doping. We also note the strong anisotropy of the positron annihilation signals and give recommendation for presenting positron data obtained in beta-Ga2O3.