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Yvind, Kresten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024InAs(P)/InP QDs as sources of single indistinguishable photons at 1.55 µm
- 2024Experimental realization of deep sub-wavelength confinement of light in a topology-optimized InP nanocavitycitations
- 2024Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bondingcitations
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Systematically Varying the Active Material Volume in a Photonic Crystal Nanolaser
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2019Doping technologies for InP membranes on silicon for nanolaserscitations
- 2018Ultra-Efficient and Broadband Nonlinear AlGaAs-on-Insulator Chip for Low-Power Optical Signal Processingcitations
- 2016An Ultra-Efficient Nonlinear Platform: AlGaAs-On-Insulator
- 2014All-Optical Signal Processing using Silicon Devicescitations
- 2013Ultrahigh-speed hybrid laser for silicon photonic integrated chips
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2012Slow-light enhancement of spontaneous emission in active photonic crystal waveguides
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2011Active III-V Semiconductor Photonic Crystal Waveguidescitations
- 2010Enhanced amplified spontaneous emission in III-V semiconductor photonic crystal waveguides
- 2005Monolithic mode-locked lasers with deeply dry etched Bragg mirror
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document
Doping technologies for InP membranes on silicon for nanolasers
Abstract
<p>We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO<sub>2</sub>/Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10<sup>18</sup>cm<sup>-3</sup>for both Zndiffused p-InP and Si-implanted n-InP.</p>