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Goossens, Anouk S.
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document
Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature
Abstract
<p>An electric field modulation of tunneling anisotropic magnetoresistance (TAMR) is reported at the Schottky interface of Ni and Nb-doped SrTiO<sub>3</sub> at room temperature. TAMR response as high as 0.11% is observed in the bias dependence. A bias is applied across the Schottky junction whose variation also modulates the built-in electric field across the interface. This is simulated from the electrostatic modelling across the Schottky interface. Strength of the TAMR response and its modulation with electric field is strongly dependent on the large dielectric permittivity of SrTiO<sub>3</sub>at room temperature and on the modulation of the Rashba spin-orbit field across the Schottky interface respectively. This experiment, shows an unique method to store and manipulate spin states by an electric field across the Schottky interface.</p>