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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Banerjee, Tamalika
University of Groningen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Domains with Varying Conductance in Tensile Strained SrMnO3 Thin Films Using Out-of-Plane Electric Fieldscitations
- 2024Domains with Varying Conductance in Tensile Strained SrMnO 3 Thin Films Using Out-of-Plane Electric Fieldscitations
- 2022Towards Energy Efficient Memristor-based TCAM for Match-Action Processingcitations
- 2018Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO3 interfacecitations
- 2018Electric Field Modulation of Spin Accumulation in Nb-doped SrTiO3 with Ni/AlOx Spin Injection Contactscitations
- 2018Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devicescitations
- 2018Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature
- 2015Electric Field Control of Spin Lifetimes in Nb-SrTiO3 by Spin-Orbit Fields
- 2015Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systemscitations
- 2004Vortex dynamics at subcritical currents at microwave frequencies in DyBa2Cu3O7-δ thin filmscitations
- 2002Peak effect and its evolution with defect structure in YBa2Cu3O7-δ thin films at microwave frequenciescitations
- 2002Effect of swift heavy ion irradiation on surface resistance of DyBa2Cu3O7−δ thin films at microwave frequencies
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document
Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature
Abstract
<p>An electric field modulation of tunneling anisotropic magnetoresistance (TAMR) is reported at the Schottky interface of Ni and Nb-doped SrTiO<sub>3</sub> at room temperature. TAMR response as high as 0.11% is observed in the bias dependence. A bias is applied across the Schottky junction whose variation also modulates the built-in electric field across the interface. This is simulated from the electrostatic modelling across the Schottky interface. Strength of the TAMR response and its modulation with electric field is strongly dependent on the large dielectric permittivity of SrTiO<sub>3</sub>at room temperature and on the modulation of the Rashba spin-orbit field across the Schottky interface respectively. This experiment, shows an unique method to store and manipulate spin states by an electric field across the Schottky interface.</p>