| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Saito, Katsuhiko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2022Effects of Al doping on the structural, electrical, and optical properties of rock-salt ZnCdO thin films grown by molecular beam epitaxycitations
- 2018Improved photovoltaic properties of ZnTeO-based intermediate band solar cellscitations
- 2017Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cellscitations
Places of action
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document
Improved photovoltaic properties of ZnTeO-based intermediate band solar cells
Abstract
Highly mismatched ZnTe<sub>1-x</sub>O<sub>x</sub> (ZnTeO) alloy is one of the potential candidates for an absorber material in a bulk intermediate band solar cell (IBSC) because a narrow, O-derived intermediate band IB (E-) is formed well below the conduction band CB (E+) edge of the ZnTe. We have previously demonstrated the generation of photocurrent induced by two-step photon absorption (TSPA) in ZnTeO IBSCs using n-ZnO window layer. However, because of the large conduction band offset (CBO) between ZnTe and ZnO, only a small open circuit voltage (V<sub>oc</sub>) was observed in this structure. Here, we report our recent progress on the development of ZnTeO IBSCs with n-ZnS window layer. ZnS has a large direct band gap of 3.7 eV with an electron affinity of 3.9 eV that can realize a smaller CBO with ZnTe. We have grown n-Type ZnS thin films on ZnTe substrates by molecular beam epitaxy (MBE), and demonstrated ZnTe solar cells and ZnTeO IBSCs using n-ZnS window layer with an improved V<sub>OC</sub>. Especially, a n-ZnS/i-ZnTe/p-ZnTe solar cell showed an improved V<sub>oc</sub> of 0.77 V, a large short-circuit current density of 6.7 mA/cm<sup>2</sup> with a fill factor of 0.60, yielding the power conversion efficiency of 3.1 %, under 1 sun illumination.