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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chen, Xia
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Silicon erasable waveguides and directional couplers by germanium ion implantation for configurable photonic circuitscitations
- 2018Germanium implanted photonic devices for post-fabrication trimming and programmable circuitscitations
- 2018Ion implantation in silicon for trimming the operating wavelength of ring resonatorscitations
- 2018Real-time monitoring and gradient feedback enable accurate trimming of ion-implanted silicon photonic devicescitations
- 2017Towards autonomous testing of photonic integrated circuitscitations
- 2017Phase trimming of Mach-Zehnder Interferometers by laser annealing of germanium implanted waveguidescitations
- 2017Post-fabrication phase trimming of Mach-Zehnder Interferometers by laser annealing of germanium implanted waveguidescitations
- 2017Trimming of ring resonators via ion implantation in siliconcitations
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Long-wavelength silicon photonic integrated circuits
- 2014Mid-IR heterogeneous silicon photonicscitations
Places of action
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document
Trimming of ring resonators via ion implantation in silicon
Abstract
Ion implantation into silicon causes radiation damage. If a sufficient dose is implanted, complete amorphisation can result in any implanted part of an optical device. Amorphous silicon has a refractive index that is significantly different higher than that of crystalline silicon (~10-1), and can therefore form the basis of a refractive index change in optical devices. This refractive index change can be partially or completely removed by annealing. In recent years we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of silicon photonics circuits. These gratings are formed by amorphising selected areas of silicon by utilising ion implantation of Germanium. However, we have now used similar technology for trimming of integrated photonic components. In this paper we discuss design, modelling and fabrication of ring resonators and their subsequent trimming using ion implantation of Germanium into silicon followed by annealing.