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Yamazaki, Tatsuya
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Publications (3/3 displayed)
- 2014Influence of substrates on formation of polycrystalline silicon nanowire filmscitations
- 2014Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallizationcitations
- 2014Solid-phase crystallization of amorphous silicon nanowire array and optical propertiescitations
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document
Influence of substrates on formation of polycrystalline silicon nanowire films
Abstract
Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.